| PART |
Description |
Maker |
| EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM
512Mb (4MBank32) Double DATA RATE SDRAM
512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| DDR110-56T7RL DDR110-XXT7RL DDR110-27T7RL |
10-LINE 56 ohm OTHER TERMINATOR, PDSO24
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH 双倍数据速率终端网络具有禁用开
DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT46V8M16 MT46V32M4 MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
DOUBLE DATA RATE DDR SDRAM 双倍数据速率的DDR SDRAM内存
|
MICRON[Micron Technology]
Micron Technology, Inc.
|
| EM47FM1688MCA-15 |
Double DATA RATE 3 SDRAM
|
Eorex Corporation
|
